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The 4H-SiC ultraviolet detector of the MESFET structure with gain is proposed and simulated in this paper. The Schottky gate of MESFET is transparent or semi-transparent to allow more of the incident UV light to be absorbed in the device. The effect of the doping and thickness of the channel layer on the photocurrent of the 4H-SiC MESFET UV detector is simulated and the effect mechanism is analyzed...
This paper presents an X-band high gain and high power three-stage PHEMT monolithic microwave integrated circuit (MMIC) power amplifier (PA). Based on 0.15-μm GaAs power PHEMT technology, this PA is fabricated on a 2-mil thick wafer. While operating under 7.2 V and 3300 mA dc bias condition, the characteristics of 29.2-dB small signal gain, 11.7-W output power, and 42.2% power added efficiency at...
In this paper several sub-cell and unit-cell power heterojunction bipolar transistor were fabricated and the impact of device dimension and structure on the device characteristic of sub-cell and unit-cell power HBT Transistor is analyzed and discussed. It was found that: for the sub-cell HBT with different dimension a larger emitter size means smaller RF gain. When the sub-cells were used to form...
A C-band linear power amplifier is successfully developed with a one-chip 2mm AlGaN/GaN high electron mobility transistors (HEMTs). Two kinds of matching circuits for the linear power amplifier are compared. Besides, stabilization methods for the amplifier are also discussed. At 5.4GHz, the developed GaN HEMTs linear power amplifier delivers a 37.2dBm (5.2W) cw P1dB output power with 9dB linear gain...
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