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An unrecoverable degradation of gate leakage is observed in AlGaN/GaN high electron mobility transistors (HEMTs) under high OFF‐state drain bias stress up to 200 V. Current‐mode deep‐level transient spectroscopy is developed for in situ observation of evolution of traps in the HEMTs before and after stress. It is revealed that two discrete traps, with activation energy of 0.54 and 0.69 eV, have converted...