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We have performed constant voltage stress (CVS) tests on GaN-on-SiC HEMT to investigate the drain current drift. Two kinds of current drift behavior are observed in CVS. The off-state drain voltage step stress tests are carried out to confirm the electric field dependent current drift. A critical voltage for drain current recovery is observed. We suggest that the recovery of drain current is due to...
Voltage step-stress tests on GaN-on-SiC HEMT showed that electric field is a driving factor for degradation. The position of localized damage is corresponding to the high electric field region. A degradation mode different from previous reports is observed, which led to an increase of drain current after stress in certain conditions. We attribute this to the collection of the positive mobile charge...
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