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The plasma parameters in 915 MHz ECR plasma with SiH 4 /H 2 mixtures were investigated using a heated Langmuir probe where extremely high dilution ratio of H 2 to SiH 4 was used for preparing microcrystalline silicon thin films. As the incident microwave power was increased, the electron temperature (T e ) decreased from 7 eV to 2–3 eV and the electron density...
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