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The electrical properties of thin-film transistors (TFTs) with ZnO channels which were deposited by radio-frequency magnetron sputtering at various oxygen partial pressures [p( O2)] are investigated. A negative shift of the turn-on voltage with a “hump” was observed, and donorlike traps were generated at intermediate energy levels from the conduction band when the ZnO channel was deposited at p(O2...
Recent several years, ZnO thin film has attracted much more attention due to its promising electrical, optical and piezoelectric properties, which can be extensive apply in electronic and optoelectronic fields such as optical waveguides, solar cell, gas sensors, etc. Especially, ZnO is a wide-band gap of 3.37 eV and high efficiency as a low-voltage cathodoluminescent phosphor material in backlight...
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