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With the trend of commercialization of through-silicon vias (TSVs) in 3D integrated microsystems, new TSVs filling processes are developed to meet the requirement of low-cost fabricating of high-electrical performance and high-thermal reliability TSVs without any voids. In this paper, Sn-based IMCs are used as the filling materials for the formation of conductive path of TSVs. The Sn-based IMCs filling...
We report on nanoscaled Schottky barrier diodes (SBDs) formed between N-type silicon nanowires (SiNWs) and nickel silicide. A top-down approach was used to achieve SiNWs with a dimension of ~ 120 nm. Ni was deposited and annealed and reacted completely with the SiNWs underneath to form nickel silicide. SBDs are formed between the SiNWs and nickel silicide, which reveal strong rectifying characteristic...
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