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Cracks developed by tensile loading in the Si thin film deposited on the Ti–50.3Ni (at%) substrate were closed by the shape memory effect of the substrate. The interfacial layer formed after annealing at 873K between the Si thin film and the substrate was essential for the shape memory effect-induced crack closure. Cracks which formed during lithiation in the Si thin film annealed at 873K after deposition...
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