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The results of the studies of the point defect generation kinetics in the Si-SiO 2 system by means of electron spin resonance (ESR) and nuclear magnetic resonance (NMR) are presented. It has been established that the ESR and NMR signal intensities change non-monotonously with oxide film thickness and the maximum of the ESR and minimum of the NMR signals occur at the same oxidation time. The...
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