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Bias temperature instability of TiN/HfOx/Pt resistive random access memory (ReRAM) device is investigated in this work for the first time. As temperature increases (up to 100°C in this work), it is observed that: (1) leakage current at high resistance state (HRS) increases, which can be explained by the higher density of traps inside dielectrics (related to trap-assistant tunneling), leading to a...
The paper reports the impact of TiN metal gate composition (Ti-rich vs. N-rich) and preparation methodology (atomic layer deposition-ALD vs. physical vapor deposition -PVD) on its thermal stability with HfO2 high-K dielectric, via both physical characterization (X-ray Photoelectron Spectroscopy-XPS, High Resolution TEM combined with Electron Energy Loss Spectroscopy-EELS), and electrical characterization...
A novel approach to electrochemically fabricate thin nanoporous silicon using ammonia fluoride solution is proposed and experimentally demonstrated. It is shown that highly uniform and thin nanoporous silicon layers (down to 50 nm) with high porosity can be formed in a reproducible manner under low current densities (0.01-0.1 mA/cm2) and low fluorine ion concentration (1%wt). Structural and opto-electrical...
In this letter, the temperature instability of HfOx -based resistive switching memory is investigated. It is observed that with the increase of high temperature (up to 100 ??C in this work), the leakage current of high-resistance state would increase, and the set/reset voltages would decrease. In addition, multibit switching exhibited at room temperature might not be retained with the increase of...
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