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Electrical properties of CdTe single crystals, doped by Sb, in situ at high temperature point defect equilibrium under well defined Cd and Te vapour pressure were studied. Up to ~700-800 K they revealed p-type conductivity both under Cd and Te saturation. From temperature dependency of hole density at 350-650 K the position of deep acceptor level with ionization energy Ea = Ev+0.29 eV was determined...
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