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A compact model (CM) for fin-type FETs (FinFETs) was successfully developed and applied to variability analysis of a fabricated state-of-the-art metal-gate (MG) FinFET. By combining the statistical measurements with the CM calibration, Vth variation was, for the first time, broken down into structure-based (silicon fin thickness and gate length) and material-based (gate work function) components...
A FinFET compact model, which provides physical representation of measurement data, was developed and was successfully applied to the characterization of sate-of-the-art metal-gate (MG) FinFETs. By combining the transistor size measurement and the model parameter calibration, the Vth variation of the MG FinFETs was analyzed into structure-based (TSi, LG) and material-based (gate work-function) variations...
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