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We investigated an effect of sputtering gas species (Ar, Kr, and Xe) for deposition of a W insertion layer in the CoFeB/W/CoFeB free layer on magnetic properties of the free layer and tunnel magnetoresistance (TMR) ratio of magnetic tunnel junctions (MTJs) stacks using the free layer annealed at 400 °C for 1 h. As the W insertion layer thickness $t_{W}$ increased, we found the degradation of perpendicular...
Spin-transfer-torque magnetoresistive random access memories using CoFeB-MgO based magnetic tunnel junctions with perpendicular easy axis (p-MTJs) are attracting much attention owing to their high potential in offering electronics with both low-power-consumption and high-performance [1–3].
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