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We investigated annealing temperature $T_{a}$ dependence of tunnel magnetoresistance (TMR) ratio and magnetic properties for perpendicular-anisotropy (CoFe)100–XBX/MgO magnetic tunnel junctions (MTJs) with single (CoFe)100–XBX/MgO interface (s-MTJ) and double CoFeB–MgO interface (d-MTJ) structures with various boron compositions X. High TMR ratio over 100% was observed in the s-MTJ with $X= 35$ ...
A new VLSI CAD environment considering stochastic behavior of MTJ devices is proposed for the evaluation of not only the performance but also the reliability of MTJ/MOS-hybrid logic LSI. The proposed simulator allows users to support the design of MTJ/MOS-hybrid LSI by RTL/gate-level hardware description, whose simulation considering stochastic switching behavior of MTJ device can be done by analog-mixed-signal...
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