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This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.
Silicon photomultipliers are nowadays considered a promising alternative to conventional vacuum tube photomultipliers. The physical mechanisms operating in the device need to be fully explored and modeled to understand the device operational limits and possibilities. In this work we study the dark current behavior of the pixels forming the Si photomultiplier as a function of the applied overvoltage...
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