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A RF mixer with low-voltage high performance for 2.4 GHz ISM band applications is presented. The novel topology mixer leads to better performance in terms of linearity, noise and power consumption for low supply voltage. Designed in TSMC 0.18mum CMOS technology, the mixer achieves: 9.3dB power conversion gain; 7.4dB noise figure; 8dBm input third-order intercept point (IIP3); and only 3.4mW of power...
An RF mixer with low-voltage high performance for 2.4 GHz ISM band applications is presented. The novel topology mixer leads to better performance in terms of linearity, noise and power consumption for low supply voltage. Designed in TSMC 0.18 mum CMOS technology, the mixer achieves: 8.3 dB power conversion gain; 8.0 dB noise figure; 7 dBm input third-order intercept point (IIP3); and only 3.8 mW...
A silicon optical emitter, including a light emitting device (LED) and a LED driver circuit, was realized in a standard 0.35mum CMOS technology. The LED operates in reverse breakdown mode and can be turned on at 8.3V. An output optical power of 13.6 nW was measured at 10V and 100mA, and the calculated emitted intensity was more than 1 mW/cm2 . The optical spectrum of the silicon LED is between 500-820nm...
A monolithically integrated optical receiver with spatially modulated light (SML) detector in an unmodified 0.18 mum CMOS technology is presented. The SML-detector exhibits high bandwidth by canceling out the diffusion component and suppressing the slow diffusion tail effect. The receiver comprises a zero-pole cancellation configuration preamplifier stage and a differential amplifier stage. With behavior...
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