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ALD HfZrO high-K fabricated by novel multi deposition multi annealing (MDMA) technique at room temperature in Ultraviolet-Ozone (UVO) ambient is systematically investigated for the first time via both physical and electrical characterization. As compared to the reference gate stack treated by conventional rapid thermal annealing (RTA) @ 600°C for 30 s (with PVD TiN electrode), the devices receiving...
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