The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We fabricated 2:1 multiplexer IC (MUX) with a retiming function by using 1-μm self-aligned InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs). As a result of the high performance DHBTs and the circuit design, in which we implemented broadband impedance matching, the MUX operated at 120 Gbit/s with a power dissipation of 1.27 W and an output amplitude of 520 mV when measured on the wafer...
We theoretically estimate the performance limits of the effective injection velocity, vs, and fT in the nano-scale InAs HEMTs using the quantum-corrected Monte Carlo (MC) method. The negative tail of the momentum distribution function, f(x, kx) at the potential bottleneck is caused by the electron scatterings. As Lg decreases, the negative tail decreases: which results in the increase of vs. Because...
The relation between effective emitter resistance, reeff, and collector current, IC, was investigated for InGaP/GaAs HBTs and InP/InGaAs DHBTs. While the relation between reeff and IC-1 of InGaP/GaAs HBT is linear over a wide range of IC, that of InP/InGaAs DHBT is nonlinear as if reeff in the low collector current region increased more than the dynamic emitter resistance component that is proportional...
TlInGaAs/TllnP/InP separate confinement heterostructures (SCHs) were grown by gas-source molecular-beam epitaxy and metal stripe laser diodes (LDs) were fabricated. Temperature variation of electroluminescence peak wavelength was as small as 0.06 nm/K due to the reduced temperature variation of band gap energy of TlInGaAs. Pulsed laser operation was achieved at 77 K - 297 K. Threshold current density...
InGaAsP/InGaP double heterojunction lasers emitting in the 650 nm band have been fabricated on GaAs0.61P0.39 substrates by hydride vapour-phase epitaxy. By optimising growth conditions and device structure, a threshold current density as low as 5.6 kA/cm2 is obtained, and CW operation is achieved up to ?27? C.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.