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The effect of hydrogen absorption on the electrical resistance and activation energy of MmNi4.5Al0.5 thin film was investigated. The samples were prepared by oblique deposition at different angles (θ=0∘,30∘,45∘,60∘, and 75∘) simultaneously at a pressure of 10-5 Torr at room temperature and thickness of thin film were measured using quartz crystal thickness monitor. It was found that the resistance...
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