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In this letter, we proposed a method in which a n-type GaAs wafer was first anodized in HF for a short time to form a high density of etch pits on its surface and then anodized in KOH solution to form a high density of pores with uniform distribution in it. Scanning electron microscopy revealed feature sizes of the porous structure in the nanometer range. The porous GaAs has been investigated using...
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