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The effect of a thin Hafnium interlayer on the thermal stability of NiSi film has been investigated. Both X-ray diffraction and Raman spectra show that no high resistivity NiSi 2 appears in the Hf-additioned films which were post-annealed at temperatures ranging from 600°C to 800°C. Auger electron spectroscopy and Rutherford back scattering show that the Hf interlayer has moved to the top...
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