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A potential profile along the channel in a conducting polymer field effect transistor (FET) has been measured directly using micro-manipulator with potential probing tip. The FET was fabricated with a head–tail coupled poly(3-hexylthiophene) as the channel semiconductor on a SiO 2 /n-Si substrate. The potential profile along the channel shows almost flat potential being equal to the source...
Potential profiles of an Al/poly(3-hexylthiophene), PHT film/Au diode through Al to Au electrodes have been measured directly using a micro-manipulator with a potential probe tip. A steep potential cliff is observed at the interface of Al/PHT for negative biases to Au against Al, indicating the existence of a depletion layer with higher resistance than that of the PHT bulk region. For a positive bias...
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