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Atomic-layer-deposited Al 2 O 3 and HfO 2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al 2 O 3 and HfO 2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial...
GaSb metal-oxide-semiconductor capacitors (MOSCAPs) with Ozone pre-deposition treatment at various temperatures are studied. It is found that Ozone treatment can improve the characteristics of High-k/GaSb MOSCAPs. The Interface Trap Density (Dit) is reduced by 50% after Ozone pre-deposition treatment at 200°C, and gate leakage current is reduced by around 70% after Ozone treatment at 100°C.
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