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The post-growth rapid thermal annealing (RTA) effect on hydrogenated amorphous silicon carbide thin films was investigated. The thin films were prepared by plasma-enhanced chemical vapor deposition on silicon substrate. Nearly stoichiometric polycrystalline 3C-SiC films were obtained from the Si-rich amorphous hydrogenated silicon carbide films after RTA in a vacuum at 1300 o C, which appeared...
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