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In this paper, we report on vertically scaled GaN/AIN DH-HEMTs with regrown n+GaN ohmic contacts by MBE. Our conventional AlGaN barrier was replaced with an AlN barrier, greatly reducing the barrier thickness while maintaining a high carrier density. A selective-area MBE regrowth of an n+GaN ohmic contact layer significantly reduced access resistance. The 60 nm device exhibited a low Ron of 0.81Ω·mm...
GaN-based HEMTs offer a unique combination of high electron velocity and high breakdown field making them the prime candidate for the highest performance millimeter-wave solid-state power amplifiers (PAs). Recently, we have demonstrated GaN MMIC PAs with an output power of 500 mW at W-band frequency range. The device high frequency performance has been significantly improved during the past y ears...
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