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Multiple gate field-effect transistors (MuGFET) are generally used in modern time semiconductor field due to better transistor current flow. However in the last advanced generation, MuGFET has transferred to Fin Field Effect Transistor (FinFET) structure with 3 dimensional (3-D) geometry to enable the minimize off-state leakage currents, high transistor current flow and quick switch…etc. advantages...
This paper presents a novel diagnosis algorithm for small delay defects (SDD). Faster-than-at-speed test sets are generated by masking long paths in the circuit for testing SDD. The proposed diagnosis technique uses timing upper and lower bound to improve the diagnosis resolution. Also, timing-aware single location at a time (TA-SLAT) technique is proposed to diagnose multiple SDD. Test results of...
A current biased pseudo-resistor for implantable extracellular neural signal recording applications is introduced in this work. The pseudo-resistor, which is biased in the subthreshold region, is able to realize a very large resistance while keeping the silicon area small. A wide range of resistances can also be implemented by changing the bias current. Issues concerning the linearity of the pseudo-resistor...
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