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The thermal annealing behavior of oxygen in neutron irradiation Czochralski-silicon (CZ-Si) has been investigated systemically. It was found that a heavy dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070–1130°C). We attribute this effect to the form of defect cluster induced by neutron irradiation, it may be as the core for the oxygen...
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