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Self-protected GaN power devices were realized using AlGaN/GaN-on-Si platform, where two built-in intelligent functions were demonstrated for “Smart Discrete” applications. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the...
An AlGaN/GaN lateral field-effect rectifier with intrinsic ON-state current limiting capability is demonstrated by adding a Schottky contact metal (length of LD) beyond the ohmic contact region at the cathode electrode. The onset of the current limiting function is self-activated when the voltage drop across the two-dimensional gas (2DEG) channel under the Schottky contact reaches the pinch-off voltage...
In this letter, we propose an AlGaN/GaN normally off high-electron mobility transistor (HEMT) with reverse drain blocking capability. The device features a Schottky-ohmic drain electrode in which a Schottky-controlled normally off channel is inserted between the gate and the conventional ohmic drain contact. Under negative reverse drain bias, the normally off channel provides an energy barrier that...
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