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The structural properties of nitride‐based light‐emitting diodes (LEDs) grown on micro‐ and nano‐scale patterned sapphire substrates (PSS) were discussed in detail. The high resolution X‐ray diffraction (HRXRD) and etch‐pit density (EPD) results reveal that the crystalline quality of the epitaxial GaN film could be effectively improved by using the PSS technique, and depended on the aspect ratio of...
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