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A thermal model of Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) examines the impact of diamond substrate parameters on device thermal performance. These parameters include substrate thickness, GaN-substrate thermal boundary resistance (TBR), and a simplified anisotropic substrate thermal conductivity. Diamond substrates appear to only provide thermal improvement over GaN-on-Silicon...
The presence of multiple thermally resistive layers in a standard power electronics package is a hindrance to thermal dissipation. By reducing the thermal stack and incorporating microchannel cold plates into the Aluminum Nitride substrate layer, significant improvement can be made. While parallel microchannel coolers have proved their faculty for single chip cooling, manifold microchannel coolers...
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