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Capacitance–voltage (C–V) characteristics of P3HT:PCBM devices of two different thicknesses are correlated with current density–voltage (J–V) characteristics. The rising portion of the C–V characteristics coincides with the exponential current density below the built-in voltage. The negative capacitance (NC) of these devices is a low frequency phenomenon and it occurs in trap-free space charge limited...
Bulk heterojunction (BHJ) solar cells of P3HT:PCBM doped with SWNTs were fabricated which doubled the efficiency over the undoped devices. No surface modifications of SWNTs were done during fabrication. Absorption and photoluminescence spectra along with photocurrent and spectral response of the devices show that SWNTs do not result in any significant charge generation at the P3HT:SWNT interface indicating...
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