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The S-Te inter-diffusion in CdTe/CdS heterojunction has been studied by X-ray diffraction, Atomic force microscope and Spectroscopic ellipsometry. For the first time, the phase segregation of CdTeySx compound that is confirmed by X-ray measurement has been taken into account in the analysis of ellipsometry, which promotes the analytical reliability. Benefit from the dielectric constants obtained from...
The S–Te inter-diffusion at CdTe/CdS heterojunction within ITO/CdS /CdTe multilayer is studied by Spectroscopic ellipsometry. Analysis shows that consumption of CdS and S–Te inter-diffusion principally occurs during high temperature CdTe deposition rather than post CdCl2 annealing. High temperature CdTe deposition results in the 183nm intermixed layer CdSxTe1−x, while the low temperature one exhibits...
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