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A 1G-cell NOR flash memory chip has been designed and fabricated successfully with 65 nm technology. To compromise the array efficiency and chip speed, the paper establishes an array model including parasitics of the whole array, and optimizes the sector structure as 512 wordlines (WLs) and 4096 bitlines (BLs). Furthermore, by adding other models of long and thin metal lines, we have analyzed the...
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