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Cu2O is a p-type semiconductor with desirable bulk properties for photovoltaics. However, the lack of an n-type dopant and surface instability have hindered the development of a high efficiency Cu2O device. In this work, the floating zone method is used to grow high quality single crystals of Cu2O in order to controllably study the interfacial reactions between Cu2O and its heterojunction partners...
Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. The record solar energy conversion efficiency for Zn3P2 cells of 6% (M. Bhushan et al., Appl. Phys. Lett., 1980) used a Mg/Zn3P2 device geometry that required annealing to reach peak performance. Here we report photovoltaic device results and junction composition...
Zinc phosphide (Zn3P2) is a promising and earth-abundant alternative to traditional materials (e.g. CdTe, CIGS, a-Si) for thin film photovoltaics. We report the fabrication of Mg/Zn3P2 Schottky diodes with VOC values reaching 550 mV, JSC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%. Previous authors have suggested that Mg impurities behave as n-type dopants in Zn3P2, but combined...
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