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In this paper, we report on two-dimensional (2D) numerical simulations of photoresponse for HgCdTe infrared photodiode. Effects of conduction band non-parabolic and band gap narrowing (BGN) have been investigated in detail. By taking into account the contributions: (i) the Burstein-Moss (BM) shift with a non-parabolic conduction band, (ii) the BGN effect, and (iii) the Hg-vacancy-induced acceptor...
Effects of hetero-related bulk traps on photoresponse for long-wavelength Hg1-xCdxTe infrared photodiodes have been numerically studied. The model involves a generalized approach, taking into account absorption coefficient, trap-assisted and band-to-band tunneling recombination mechanism, and bulk traps distributions associated with misfit dislocations present in the GaAs-substrate/Hg1-xCdxTe hetero-structure...
We report on 2D numerical simulations of spectral photoresponse characteristic for two-color HgCdTe infrared photovoltaic detector. Effects of thickness of absorption layer and doping profiles on the photoresponse, quantum efficiency and crosstalk have been investigated. Optimal thickness of absorption layers and doping profiles are numerically calculated.
We present a systematic study on a set of n-type GaAs-AlGaAs quantum-well infrared photodetectors (QWIPs) with varying Si doping density in the wells. It is revealed that the increase in doping density enhances proportionally the absorption efficiency and responsivity while increasing exponentially the dark current and hence the dark current noise. We experimentally confirm the theoretically predicted...
We report on 2D numerical simulations of photo-response characteristic for long-wavelength HgCdTe infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated. Optimal thickness of absorption layers at different absorption length and diffusion length are extracted numerically. An empirical formula is proposed to predict reasonable optimal thickness of...
The theoretical study has been performed on a low dark current InGaAs/GaAs very-long-wavelength (>12 mum) quantum well infrared photodetector (VLW-QWIP), based on a double barrier resonant tunneling structure (DBRTS). The ground tunneling state of the central quantum well (QW) of the DBRTS resonates with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters...
Quantum well Infrared photodetector (QWIP) has high impedance, fast response time, long integration time, low power consumption and so on, special advantages in the area of Very Long Wavelength infrared (VLWIR) Focal Plane Array (FPA) applications. Readout integrated circuit (ROIC) is one of the core parts of FPA. On this paper, A Capacitive Feedback Transimpedance Amplifier (CTIA) CMOS ROIC was adopted...
In this paper the performance of two-color middle wavelength infrared photovoltaic HgCdTe detector is simulated numerically based on two-dimensional model. Structure of n-p-p-p-n is designed in simultaneous mode. Spectral response is calculated, crosstalk between two bands and the function of barrier layer are analyzed in detail. Calculation results show that the radiation in MW1(shorter wavelength...
An data-processing method has been developed to obtain the device parameters from the resistance-voltage (R-V) characteristics measured in long-wavelength HgCdTe photodiode.
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