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P-MOSFETs with HfO2 gate dielectric and TiN metal gate were fabricated on compressively strained SiGe layers with a Ge content of 50 at.% and electrically characterized. The devices showed good output and transfer characteristics. The hole mobility, extracted by a split C-V technique, presents a value of ~200 cm2/V·s in the strong inversion regime.
The photoresist SU-8, often used in microtechnology, has been acoustically characterized at a frequency of 1 GHz thanks to thin-disk piezoelectric ZnO transducers. Acoustical characterization of SU-8-based nanocomposites made of SU-8 and nanosize TiO2 and/or SrTiO3 particles is presented. These nanocomposite materials would be used to achieve acoustical matching between silicon and water at a frequency...
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