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Gd 2 O 3 thin films were deposited on Si (100) substrates at 650 o C by a magnetron sputtering system under different Ar/O 2 ratios of 6:1, 4:1 and 2:1. The effect of the oxygen concentration on the properties of oxide thin films was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscopy and capacitance-voltage (C-V)measurement...
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