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A study of an eight-transistor (8-T) SRAM cell and its implementation in carbon nanotube FET (CNTFET) technology is presented. CNTFETs have shown great potential as post-silicon CMOS technology due to their superior transport properties, improved current density and excellent robustness to process, voltage and temperature variations. HSPICE simulations demonstrate great advantages for this cell design...
Implementations of SRAM cells in FinFET and carbon nanotube FET (CNTFET) technologies are presented in this paper. The International Technology Roadmap for Semiconductors has identified these technologies as likely candidates to replace bulk CMOS. Leakage current is one of the major contributors in the power consumption in SRAM arrays; FinFETs have been shown to greatly reduce leakage current. The...
In this paper three carbon nanotube FET based static memory cells are compared on read and write delays, energy consumption, and performance under diameter variation corners. The carbon nanotube FET is currently considered to be the possible ldquobeyond CMOSrdquo device due to its1-D transport properties that include low carrier scattering and ballistic transport. The memory cells are classified by...
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