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The temperature impact on the Ohmic contact to Gallium Nitride (GaN) device properties is investigated in the range of 25°C to 300°C by means of the Transmission Line Method (TLM) technique. This study is centered in two kinds of Ohmic contacts: Implanted N+ GaN and heterojunction AlGaN/GaN contacts. For N+ contact resistance behavior is explained in terms of the field-effect or thermionic field effect...
A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers were characterized in the 25degC-300degC range, while the Si-PiN was tested up to 200degC due to the Si temperature limitation. 4H-SiC rectifiers exhibited superior temperature performances and their design can be adapted to a specific application. Surge current tests...
A comparison between electrical characteristics of 1.2 kV Si-PiN and 4H-SiC Schottky/JBS rectifiers is presented. The 4H-SiC rectifiers are characterised in the 25degC-300degC range while the Si-PiN is tested up to 200degC due to the Si temperature limitation 4H-SiC rectifiers exhibit superior temperature performances and their design can be adapted to a specific applications.
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