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In article number 1905433, Adam W. Tsen and co‐workers simultaneously demonstrate magnetic‐field‐tunable memristive switching and electrical control of magnetism in nanoscale tunnel junctions incorporating a 2D layer antiferromagnet, chromium triiodide. Driven by the positive feedback of self‐heating, the current and magnetic transitions are robust and further occur under a 40 ns timescale. Such devices...
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase‐change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective...
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