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(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000eV at room temperature. There was no new peak found except GaAs substrate peaks (002) and (004) by X-ray diffraction. Rocking curves were measured for symmetric (004) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions...
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