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In this paper, we demonstrate an ACF-packaged ultrathin Si-based flexible NAND flash memory by adopting a simple method, without using a conventional transfer process. By gently etching the bottom sacrificial silicon of the SOI wafer, flip-chip bonded devices were sufficiently thinned down (roughly to 1 μm) to fabricate highly flexible, fully packaged Si-based NAND flash memory, without any cracks...
The planar and cross-sectional crystalline analyses were performed on the stress induced voiding (SIV). The SIV was initiated at the triple junction of grain boundaries, not at the junction of twin and grain boundaries. The void grew preferentially in one of the grains joining at the triple junction. From stress calculation based on the measured crystalline structure, the voided grain is the stress...
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