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Defects on crystal and/or thin film surfaces play an important role in their physical and chemical properties. Diffusion or motion of such structures results in microstructural dynamic changes. The diffusion of single atom/point defects were previously reported, due to the difficulty of observation, the motion of large-scale defects (the defect consist of multiple missing atoms) using combination...
CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force...
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