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The two-layered Y/Zr structures (0.1 μm thick of Y film on 1.0 μm thick of Zr film) have been deposited on silicon substrate and oxidized in Ar+O 2 plasma in temperature range 350–800 °C simultaneously under irradiation by ions extracted by 100 V bias. The characterization of coating structure was carried out by the X-ray diffraction. The secondary ion mass-spectrometry was used for the recording...
Two-layered Y/Zr films (0.1μm thick of Y film on 1.0μm thick of Zr film) have been deposited on silicon substrate and oxidized in three different ways: (i) thermal annealing in air; (ii) oxidation under high-flux low-energy ion irradiation, and (iii) oxidation under high-flux solar energy irradiation in air. The characterization of coating structure was carried out by X-ray diffraction. Secondary...
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