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This paper reports room temperature hydrogen gas sensing characteristics of porous quaternary AlInGaN prepared via ultraviolet-assisted photo-electrochemical etching in 1–4% diluted potassium hydroxide (KOH) solution. The highest sensitivity (S), the lowest response time and recovery time were obtained by the 4% KOH etched sample, owing to good adsorption and desorption of adsorbed H atoms over the...
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