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In this paper we present the 3D trapezoidal structure for analyzing FinFET MOSFETs using three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed. Validation...
In this paper we present a new approach of analyzing 3D structure for Triple-Gate MOSFETs with three different mesh regions, one at the top and two in the sidewalls of the fin, which allows the consideration of different carrier mobility at each region due to the crystalline orientation and technological processing. A procedure for the extraction of the mobility parameters in each region is developed...
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