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The post-breakdown leakage current in electrically stressed metal-oxide-semiconductor structures with thin stacked layers of titanium dioxide (TiO 2 ) over silicon dioxide (SiO 2 ) was investigated. The samples were obtained by plasma oxidation at room temperature. Multiple dielectric breakdowns were induced by the application of successive high-field voltage ramps. The resulting current–voltage...
In this work we examine the electrical behavior of thin (~10 nm) SiO2/TiO2 gate insulator stacks in MOS capacitors that have undergone multiple hard breakdown events. The post-breakdown current is modeled using a simple equivalent electrical circuit consisting of a diode with series and parallel resistances. We show that the current flowing through the non-damaged oxide area still plays a significant...
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