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Amorphous oxide semiconductor thin film transistors (AOSTFTs) with SiO2 and Indium-Gallium-Zinc-Oxides (IGZO) as dielectric and semiconductor layers respectively, are characterized in the temperature range between 300 and 400 K. The behavior of the threshold voltage, mobility factor and saturation coefficient is analyzed as function of temperature. It is shown that, using the Unified Model and Extracted...
The temperature dependence in the typical temperature operating range from 300K up to 370K of the electrical characteristics of IGZO TFTs fabricated at temperatures not exceeding 200°C is presented and modeled.It is seen that up to T=330K, the transfer curves show a parallel shift toward more negative voltages. In both subthreshold and above threshold regimes, the drain current shows Arrhenius-type...
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