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The gate leakage current present in double-gate fully depleted fin-shaped MOSFETs with metal gate/single oxynitride layer is modeled. It can significantly contribute to the drive current measured in different conditions, according to its dependence on applied voltages to the structure electrodes, as well as, on the Si regions where the gate has control. Direct tunneling of electrons from inverted...
Gate current present in double-gate fully depleted MOSFETs can significantly contribute to its measured channel current. For this reason the presence of direct tunneling and GIDL effects on the total gate and drain currents of Fin-FETs with different dimensions is analyzed. To fulfill this task, expressions for the leakage current due to direct tunneling and GIDL effects at the metal-gate/high-k structure...
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