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Amorphous oxide semiconductor thin film transistors (AOSTFTs) with SiO2 and Indium-Gallium-Zinc-Oxides (IGZO) as dielectric and semiconductor layers respectively, are characterized in the temperature range between 300 and 400 K. The behavior of the threshold voltage, mobility factor and saturation coefficient is analyzed as function of temperature. It is shown that, using the Unified Model and Extracted...
This paper presents Double Gate (DG) MOSFET models of the temperature dependences as part of a compact analytical model for the direct tunneling gate leakage and Trap-Assisted-Tunneling (TAT) current. We compare the adapted modeling calculations with experimental data of the gate leakage current in Trigate MOSFETs at various temperatures. The results of the direct tunneling current in the strong inversion...
Gate current present in double-gate fully depleted MOSFETs can significantly contribute to its measured channel current. For this reason the presence of direct tunneling and GIDL effects on the total gate and drain currents of Fin-FETs with different dimensions is analyzed. To fulfill this task, expressions for the leakage current due to direct tunneling and GIDL effects at the metal-gate/high-k structure...
The gate current present in double-gate fully depleted MOSFETs can significantly contribute to the channel current measured in these devices. For this reason, models must take account of this effect in order to represent correctly the behavior of the devices. In this paper, we report a complementation to the symmetric doped double gate model for MOSFETs, by including the presence of gate tunneling...
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