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This paper presents a compact model for the electrostatic potentials and the current characteristics of doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. An analytical expression of the potentials is derived as a function of doping concentration. Then, the mobile charge density is calculated using the analytical expressions of the surface potential at the surface and the difference of...
This paper explains the development of a compact model for organic thin film transistors (OTFTs), analyzing some of their features. The model, based on hopping transport between localized states, includes a mobility expression that depends explicitly on both the characteristic temperature and density of states of the distribution of localized states. Temperature dependences are also taken into account...
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